Our vision is to synthesize, construct, and commercialize
the world’s most precise manufactured products.
John
N. Randall, PhD
Vice President
PUBLICATIONS
Dr. Randall has published over 100 articles in refereed scientific journals.
In the area of semiconductor (optical, e-beam, ion-beam, and x-ray) lithography, he has published 41 papers. Some representative examples include:
“Reduction of Mask Induced CD Errors by Optical Proximity Correction”, John Randall, Alexander Tritchkov, Kurt Ronse, Rik Jonckheere, SPIE vol 3334 page 124-130 (1998)
“Fifteen nanometer features by sidewall processing and pattern transfer” John N. Randall and Brian L. Newell, J.Vac.Sci.Technol. B12, 3631 (1994)
“Prospects for Printing Very Large Scale Integration Circuits with Masked Ion Beam Lithography”, J. N. Randall, J.Vac.Sci.Technol. Vol A4, p.777, (1986)
In the area of quantum devices and circuits, he has published approximately 50 papers. Some examples include:
“Potential Nanoelectronic Integrated Circuit Technologies”, John Randall, Gary Frazier, Alan Seabaugh, Tom Broekaert, Microelectronics Engineering 32 15-30, 1996
“Resonant Tunneling Quantum Dot Diodes: Physics, Limitations, and Technological Prospects” James H. Luscombe, John N. Randall, and Ann Marie Bouchard, Proceedings of IEEE, vol 79, 1117, 1991
“Observation of Discrete Electronic States in a Zero-Dimensional Semiconductor Nanostructure”, M.A. Reed, J.N. Randall, R.J. Aggarwal, R.J. Matyi, T.M. Moore, and A.E. Wetsel, Phys.Rev.Lett. 60, 535 (1988)
Dr. Randall has also published papers on metrology, ohmic contacts, atomic layer epitaxy, reactive ion etching, micro electro mechanical systems (MEMS), and x-ray fluorescence analysis.
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